Linda Milor Gatech: Fotoğraflar, videolar ve ilgili haberler

In this paper we present a Built-In Self Test (BIST) methodology for diagnosis of backend time-dependent dielectric breakdown (BTDDB), via voiding due to electromigration (EM), and stress-induced voiding (SIV) in SRAM cells. Our built-in self test methodology consists of two test procedures. First, faulty cells suffering from wearout mechanisms in the SRAM system are isolated. Then, these faulty cells are tested to determine the cause of wearout.
Processor-level Reliability Simulator for Time- Dependent Gate Dielectric  Breakdown

Processor-level Reliability Simulator for Time- Dependent Gate Dielectric Breakdown

Paper Title (use style: paper title)

Paper Title (use style: paper title)

Built-in self test methodology for diagnosis of backend wearout mechanisms  in SRAM cells

Built-in self test methodology for diagnosis of backend wearout mechanisms in SRAM cells

Electric field enhancement caused by porosity in ultra-low-k dielectrics

Electric field enhancement caused by porosity in ultra-low-k dielectrics

Georgia Tech Capstone Design Expo

Georgia Tech Capstone Design Expo

Georgia Tech Capstone Design Expo

Georgia Tech Capstone Design Expo

G. Tong Zhou – Women in ECE

G. Tong Zhou – Women in ECE

ECE4871 Fall 2021 Syllabus R1

ECE4871 Fall 2021 Syllabus R1

PPT - ECE4007 Senior Design Project PowerPoint Presentation, free download  - ID:5390249

PPT - ECE4007 Senior Design Project PowerPoint Presentation, free download - ID:5390249

Wearout-aware compiler-directed register assignment for embedded systems

Wearout-aware compiler-directed register assignment for embedded systems

System-level modeling and reliability analysis of microprocessor systems

System-level modeling and reliability analysis of microprocessor systems

Porosity-Induced Electric Field Enhancement and Its Impact on Charge  Transport in Porous Inter-Metal Dielectrics

Porosity-Induced Electric Field Enhancement and Its Impact on Charge Transport in Porous Inter-Metal Dielectrics

Impact of stress acceleration on mixed-signal gate oxide lifetime

Impact of stress acceleration on mixed-signal gate oxide lifetime

Reliable Cache Design with Detection of Gate Oxide Breakdown Using BIST

Reliable Cache Design with Detection of Gate Oxide Breakdown Using BIST

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